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rev. 4555b?sige?10/03 features 700 mhz to 2700 mhz operating frequency very low noise floor performance very good sideband and carrier suppression supports wideband baseband input very high linearity very low lo leakage 50 ? impedance on rf and lo port low lo drive requirements no external if filter supply voltage 5 v small ssop16 package applications infrastructure digital communication systems gsm/tdma/cdma2000/w-cdma/umts/ism band transceivers rf radio links wireless modem access points high performance rf instrumentation electrostatic sensitive device. observe precautions for handling. description the t0790 is a direct quadrature modulator using atmel?s silicon-germanium (sige) process. this modulator features a frequency range of 700 to 2700 mhz with excellent carrier and sideband suppression and a very low noise floor. it operates from a single 5 v supply and provides -11 dbm of power while requiring only 0 dbm input to the inte- grated lo driver. an rf and an lo amplifier are also included. the t0790 incorporates internal matching on each rf, if and lo port to enhance ease of use and to reduce the external components required. the lo input can be driven differentially or single ended. figure 1. block diagram 13 12 16 1 4 5 8 9 bbq- bbq+ bbi+ bbi- lo+ lo- rf+ rf- 90 0 700 mhz - 2700 mhz direct quadrature modulator t0790 preliminary
2 t0790 [preliminary] 4555b?sige?10/03 pin configuration figure 2. pinning ssop16 bbq- vcc gnd rf+ rf- gnd vcc bbi- 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 bbq+ vcc gnd lo+ lo- gnd /sd bbi+ pin description pin symbol function 1 bbq+ baseband q-axis positive input 2 vcc supply voltage 3 gnd ground 4 lo_in+ positive local oscillator input, nominal dc voltage is 2.0 v internally biased; input should be ac-coupled 5 lo_in- negartive local oscillator input, nominal dc voltage is 2.0 v internally biased; input should be ac-coupled 6 gnd ground 7 /sd shutdown control 8 bbi+ baseband i-axis positive input 9 bbi- baseband i-axis negative input 10 vcc supply voltage 11 gnd ground 12 rf_in- negative rf output; nominal dc voltage is 2.4 vinternally biased; input should be ac-coupled 13 rf_in+ positive rf output; nominal dc voltage is 2.4 v internally biased; input should be ac-coupled 14 gnd ground 15 vcc supply voltage 16 bbq- baseband q-axis negative input ? paddle device ground and heat sink, requires good thermal path; rf reference plane absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability . parameters symbols value unit supply voltage, no rf applied v cc 5.5 v lo input signals lo_in-, lo_in+ +10.0 dbm input voltage bbi+, bbi-, bbq+, bbq- 3 v operating case temperature t c -40 to +85 c storage temperature t stg -55 to +150 c
3 t0790 [preliminary] 4555b?sige?10/03 thermal resistance parameters symbols value unit junction ambient r thja 35 k/w electrical characteristics test conditions: unless otherwise noted, the following conditions apply to typical performance specification under static conditions: v cc = 5 v, t amb = 25 c; baseband inputs: 1.9 v dc bias, 200 khz frequency, 300 mv p-p , 600 mv p-p differential drive, i/q signals in quadrature, lo = 1960 mhz; p lo = -5 dbm no. parameters test conditions pin symbol min. typ. max. unit type* general performance supply voltage 2, 10, 15 v cc 4.75 5.0 5.25 v a supply current 2, 10, 15 i cc 73 82 ma a lo input lo drive 4, 5 p lo -8 -5 -2 dbm d lo frequency 4, 5 f lo 700 2700 mhz b lo return loss matched to 50 4, 5 rl lo 16 db c baseband inputs baseband input frequency range -3 db bandwidth, baseband inputs, terminated with 50 1, 8, 9, 16 f bb dc 500 mhz d baseband input resistance per pin 1, 8, 9, 16 r bb 4.4 k d baseband input capacitance per pin 1, 8, 9, 16 c bb 4pfd miscellaneous shutdown attenuation 7a sd 60 db d shutdown pin resistance at 1 mhz 7 r sd 11.9 k d shutdown pin capacitance at 1 mhz 7 c sd 5.2 pf d shutdown input thresholds shutdown disabled (normal operation) 73.75 v cc vd shutdown enabled 7 0 1.5 v d *) type means: a = 100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter
4 t0790 [preliminary] 4555b?sige?10/03 rf electrical characteristics (700 to 1000 mhz) test conditions: unless otherwise noted, the following conditions apply to typical performance specification under static conditions: v cc = 5 v, t amb = 25 c; baseband inputs: 1.9 v dc bias, 200 khz frequency, 300 mv p-p , 600 mv p-p differential drive, i/q signals in quadrature, lo = 900 mhz; p lo = -5 dbm no. parameters test conditions pin symbol min. typ. max. unit type* rf output port rf frequency 12, 13 f rf 700 1000 mhz b output power 12, 13 p rfout -13.0 -10.5 -9.0 dbm a rf return loss matched to 50 12, 13 p lorl 20 db d 1-db output compression point 12, 13 p1db 3 4 dbm a lo-rf leakage 12, 13 p lorf -40 -34 dbm d sideband suppression 12, 13 a sb 34 40 db d im3 suppression two tone baseband input at 600 mv p-p differential per tone 12, 13 a im3 58 62 db d broadband noise floor 12, 13 p noise -154 -148 dbm/ hz c quadrature phase error 12, 13 -2 0.5 +2 b i/q amplitude balance 12, 13 -0.2 0.5 +0.2 db b *) type means: a = 100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter rf electrical characteristics (1700 to 2000 mhz) test conditions: unless otherwise noted, the following conditions apply to typical performance specification under static conditions: v cc = 5 v, t amb = 25 c; baseband inputs: 1.9 v dc bias, 200 khz frequency, 300 mv p-p , 600 mv p-p differential drive, i/q signals in quadrature, lo = 1960 mhz; p lo = -5 dbm no. parameters test conditions pin symbol min. typ. max. unit type* rf output port rf frequency 12, 13 f rf 1700 2000 mhz b output power 12, 13 p rfout -15.0 -11.5 -10.0 dbm a rf return loss matched to 50 12, 13 p lorl 16 db d 1-db output compression point 12, 13 p1db 2 3 dbm a lo-rf leakage 12, 13 p lorf -40 -32 dbm d sideband suppression 12, 13 a sb 34 40 db d im3 suppression two tone baseband input at 600 mv p-p differential per tone 12, 13 a im3 58 62 db d *) type means: a = 100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter
5 t0790 [preliminary] 4555b?sige?10/03 broadband noise floor 12, 13 p noise -155 -148 dbm/ hz c quadrature phase error 12, 13 -2 0.5 +2 b i/q amplitude balance 12, 13 -0.2 0.5 +0.2 db b rf electrical characteristics (1700 to 2000 mhz) (continued) test conditions: unless otherwise noted, the following conditions apply to typical performance specification under static conditions: v cc = 5 v, t amb = 25 c; baseband inputs: 1.9 v dc bias, 200 khz frequency, 300 mv p-p , 600 mv p-p differential drive, i/q signals in quadrature, lo = 1960 mhz; p lo = -5 dbm no. parameters test conditions pin symbol min. typ. max. unit type* *) type means: a = 100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter rf electrical characteristics (2300 to 2700 mhz) test conditions: unless otherwise noted, the following conditions apply to typical performance specification under static conditions: v cc = 5 v, t amb = 25 c; baseband inputs: 1.9 v dc bias, 200 khz frequency, 300 mv p-p , 600 mv p-p differential drive, i/q signals in quadrature, lo = 2600 mhz; p lo = -5 dbm no. parameters test conditions pin symbol min. typ. max. unit type* rf output port rf frequency 12, 13 f rf 2300 2700 mhz b output power 12, 13 p rfout -18 -14.5 -13 dbm a rf return loss matched to 50 12, 13 p lorl 15 db d 1-db output compression point 12, 13 p1db tbd dbm a lo-rf leakage 12, 13 p lorf -40 -32 dbm d sideband suppression 12, 13 a sb 34 40 db d im3 suppression two tone baseband input at 600 mv p-p differential per tone 12, 13 a im3 tbd db d broadband noise floor 12, 13 p noise tbd dbm/ hz c quadrature phase error 12, 13 -2 0.5 +2 b i/q amplitude balance 12, 13 -0.2 0.5 +0.2 db b *) type means: a = 100% tested, b = 100% correlation tested, c = characterized on samples, d = design parameter
6 t0790 [preliminary] 4555b?sige?10/03 700 mhz to 1000 mhz: typical device performance figure 3. ssb power versus lo frequency figure 4. output p1db versus lo frequency figure 5. carrier feedthrough versus lo frequency ssb power vs. lo frequency -15 -13 -11 -9 -7 -5 700 750 800 850 900 950 1000 lo frequency (mhz) ssb power (d bm) out put p1db vs. lo frequency 0 2 4 6 8 10 700 750 800 850 900 950 1000 lo frequency (mhz) output p1db (dbm) carrier feedthrough vs. lo frequency -50 -46 -42 -38 -34 -30 700 750 800 850 900 950 1000 lo frequency (mhz) carrier feedthrough (dbm)
7 t0790 [preliminary] 4555b?sige?10/03 figure 6. sideband suppression versus lo frequency figure 7. intermodulation distortion versus ssb output power figure 8. rf and lo return losses sideband suppression vs. lo frequency 30 34 38 42 46 50 700 750 800 850 900 950 1000 lo frequency (mhz) sideband suppression (dbm) intermodulation distortion vs. ssb output power @ 880 mhz -100 -80 -60 -40 -20 0 -12 -10 -8 -6 -4 -2 0 2 4 6 bb input level (dbvp-p diff.) output power (dbm) fundamental (each t one) 3rd intermod. (each tone) rf & lo port return losses 0 10 20 30 40 700 750 800 850 900 950 1000 frequency (mhz) ret urn loss (d b) rf po r t lo por t
8 t0790 [preliminary] 4555b?sige?10/03 1500 mhz to 2500 mhz: typical device performance all tests have been done on a testboard with lo and rf matching to 2600 mhz (see ?application bard schematic? description on page 10). test in a clima chamber required long cables, which added additionall loss and affected the output power. figure 9. ssb power versus lo frequency figure 10. carrier feedthrough versus lo frequency figure 11. sideband suppression versus lo frequency -20.0 -18.0 -16.0 -14.0 -12.0 -10.0 -8.0 -6.0 -4.0 -2.0 0.0 1.5 2.0 2.5 3.0 lo frequency (ghz) ssb power (dbm) -40c +25c +85c -70.0 -60.0 -50.0 -40.0 -30.0 -20.0 -10.0 0.0 1.5 2.0 2.5 3.0 lo frequency (ghz) lo leakage (dbm) -40c +25c +85c 0.0 10.0 20.0 30.0 40.0 50.0 60.0 1.5 2.0 2.5 3.0 lo frequency (ghz) sideband suppression (db) -40c +25c +85c
9 t0790 [preliminary] 4555b?sige?10/03 figure 12. rf and lo return losses figure 13. phase error versus lo frequency figure 14. amplitude balance versus lo frequency 0.0 5.0 10.0 15.0 20.0 25.0 30.0 2.0 2.5 3.0 lo frequency (ghz) return loss (db) rf port at -40c lo port at -40c rf port at +25c lo port at +25c rf port at +85c lo port at +85c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.5 2.0 2.5 3.0 lo frequency (ghz) phase error (c) -40c +25c +85c 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 1.5 2.0 2.5 3.0 lo frequency (ghz) amplitude balance (db) -40c +25c +85c
10 t0790 [preliminary] 4555b?sige?10/03 figure 15. application schematic note: 1. may vary due to printed board layout and material. vcc p3 r5 loin c5 c3 c12 c15 1 2 3 4 5 6 7 8 vcc vcc 16 15 14 13 12 11 10 9 c4 c6 c13 c16 4 5 t2 1 8 rfout p4 p5 p6 r7 r6 r1 r2 p1 p2 d1 c11 t1 c8 vcc +5v c2 l1 8 1 5 4 sh1 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 t0790 vcc bill of materials (700 mhz to 1000 mhz evaluation board) component reference vendor part number/ remark value (1) size/package direc quadrature modulator d1 atmel t0790 ssop16 inductor l1 wrth elektronik ? 74476401 1 h 1210 resistor r1, r2, r6, r7 180 0402 resistor r5 1 k 0402 capacitor c3,c16 33 pf 0402 capacitor c4,c15 1 nf 0402 electrolytic capacitor c2 10 f size a capacitor c5, c6, c12, c13 10 pf 0402 capacitor c8, c11 n.c. 0402 rf transformer 700 mhz to 1300 mhz t1, t2 panansonic ? ehf-fd1618 3216 rf connector p8, p9, p10, p11, p12, p13 johnson components ? 142-0711-841 sma
11 t0790 [preliminary] 4555b?sige?10/03 note: 1. may vary due to printed board layout and material. note: 1. may vary due to printed board layout and material. bill of materials (1700 mhz to 2500 mhz evaluation board) component reference vendor part number/ remark value (1) size/package direc quadrature modulator d1 atmel t0790 ssop16 inductor l1 wrth elektronik 74476401 1 h 1210 resistor r1, r2, r6, r7 180 0402 resistor r5 1 k 0402 capacitor c3,c16 6.8 pf 0402 capacitor c4,c15 1 nf 0402 electrolytic capacitor c2 10 f size a capacitor c5, c6, c12, c13 2.7 pf 0402 capacitor c8, c11 n.c. 0402 rf transformer 1200 mhz to 2200 mhz t1, t2 panansonic ehf-fd1619 3216 rf connector p8, p9, p10, p11, p12, p13 johnson components 142-0711-841 sma bill of materials (2500 mhz to 2700 mhz evaluation board) component reference vendor part number/ remark value (1) size/package direc quadrature modulator d1 atmel t0790 ssop16 inductor l1 wrth elektronik 74476401 1 h 1210 resistor r1, r2, r6, r7 180 0402 resistor r5 1 k 0402 capacitor c3,c16 6.8 pf 0402 capacitor c4,c15 1 nf 0402 electrolytic capacitor c2 10 f size a capacitor c5, c12 1.5 pf 0402 capacitor c6, c13 1.8 pf 0402 capacitor c8, c11 n.c. 0402 rf transformer 1200 mhz to 2200 mhz t1, t2 panansonic ehf-fd1619 3216 rf connector p8, p9, p10, p11, p12, p13 johnson components 142-0711-841 sma
12 t0790 [preliminary] 4555b?sige?10/03 figure 16. demo test board (fully assembled pcb) figure 17. recommended package footprint note: only ground signal traces are allowed directly under the package. heatslug must be soldered to gnd. plugging of the ground vias under the heat slug is also recommended to avoid soldering problems. 2" 1 2 h1 h2 p8 p9 p10 p11 p12 p13 c3 l1 p14 r1 r9 r10 r7 r8 c9 c6 c18 c4 c5 c10 c16 c17 sh1 1 2 2" c1 t3 t4 c2 3.0 3.0 1.25 6.9 0.7 0.9 0.25 via - indicates metalization - vias connect pad to underlying ground plane all units are in mm 0.62 0.62 0.30 0.35
13 t0790 [preliminary] 4555b?sige?10/03 package information ordering information extended type number package remarks t0790-6c ssop16 ?
printed on recycled paper. disclaimer: atmel corporation makes no warranty for the use of its products, other than those expressly contained in the company?s standar d warranty which is detailed in atmel?s terms and conditions located on the company?s web site. the company assumes no responsibi lity for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time wi thout notice, and does not make any commitment to update the information contained her ein. no licenses to patents or other intellectual property of atmel are granted by the company in connection with the sale of atmel produc ts, expressly or by implication. atmel?s products are not aut horized for use as critical components in life support devices or systems. atmel corporation atmel operations 2325 orchard parkway san jose, ca 95131, usa tel: 1(408) 441-0311 fax: 1(408) 487-2600 regional headquarters europe atmel sarl route des arsenaux 41 case postale 80 ch-1705 fribourg switzerland tel: (41) 26-426-5555 fax: (41) 26-426-5500 asia room 1219 chinachem golden plaza 77 mody road tsimshatsui east kowloon hong kong tel: (852) 2721-9778 fax: (852) 2722-1369 japan 9f, tonetsu shinkawa bldg. 1-24-8 shinkawa chuo-ku, tokyo 104-0033 japan tel: (81) 3-3523-3551 fax: (81) 3-3523-7581 memory 2325 orchard parkway san jose, ca 95131, usa tel: 1(408) 441-0311 fax: 1(408) 436-4314 microcontrollers 2325 orchard parkway san jose, ca 95131, usa tel: 1(408) 441-0311 fax: 1(408) 436-4314 la chantrerie bp 70602 44306 nantes cedex 3, france tel: (33) 2-40-18-18-18 fax: (33) 2-40-18-19-60 asic/assp/smart cards zone industrielle 13106 rousset cedex, france tel: (33) 4-42-53-60-00 fax: (33) 4-42-53-60-01 1150 east cheyenne mtn. blvd. colorado springs, co 80906, usa tel: 1(719) 576-3300 fax: 1(719) 540-1759 scottish enterprise technology park maxwell building east kilbride g75 0qr, scotland tel: (44) 1355-803-000 fax: (44) 1355-242-743 rf/automotive theresienstrasse 2 postfach 3535 74025 heilbronn, germany tel: (49) 71-31-67-0 fax: (49) 71-31-67-2340 1150 east cheyenne mtn. blvd. colorado springs, co 80906, usa tel: 1(719) 576-3300 fax: 1(719) 540-1759 biometrics/imaging/hi-rel mpu/ high speed converters/rf datacom avenue de rochepleine bp 123 38521 saint-egreve cedex, france tel: (33) 4-76-58-30-00 fax: (33) 4-76-58-34-80 literature requests www.atmel.com/literature 4555b?sige?10/03 ? atmel corporation 2003 . all rights reserved. atmel ? and combinations thereof are the registered trademarks of atmel corporation or its subsidiaries, wrth elektronik ? is a registered trademark of adolf wrth gmbh & co. kg, panasonic ? is a registered trademark of matsushita electric industrial co., ltd., johnson components ? is a trademark of emerson electric co. other terms and product names may be the trademarks of others.

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